Research Of Manufacture And Performance Of Metal Oxide Thin Film Transistor Based On Solution Method

Metal oxide thin film transistors?MOTFTs?have attracted more attentions due to their potential applications in flat panel displays which require large size,high frame rate and high resolution.MOTFTs have many advantages,such as high carrier mobility,high optical transmittance,low process temperature and so on.In this thesis,in order to build a high performance thin film transistor which have high carrier mobility and low operation voltage,we fabricated a metal oxide thin film transistor with a high dielectric constant nanocomposite as insulation layer and indium oxide?In₂O₃?as active layer based on solution method.We have investigated the performance of solution-processed alumina?Al₂O₃?:poly?4-vinyphenol??PVP?nanocomposite insulation layer with and without modified layer.And then we have researched the device performance of In₂O₃-TFT with conventional solution method and combustion synthesized method.These specific researches were as follows:1. The research of Al₂O₃:PVP nanocomposite insulation layer.We have fabricated solution-processed Al₂O₃:PVP nanocomposite as insulation layer with different concentration of PVP.Next we analyzed the dielectric properties of this nanocomposite insulation layer by measuring the surface morphology and electrical characteristic.Then the pentacene-TFTs were built to prove the performance of the nanocomposite.When the device with a PVP concentration of 10%,it showed a carrier mobility of ?PMMA?as modified layer to improve the property of solution-processed Al₂O₃:PVP nanocomposite insulation layer.The devices with modified layer showed a higher2.The research of active layer based on solution method and combustion synthesized method.We have investigated the difference of semiconductor layer on solution-processed Al₂O₃:PVP nanocomposite insulation layer treated by different anneal temperature.The solution-processed In₂O₃-TFT with anneal temperature of 350? build the active layer with combustion synthesized method which need lower thermal treatment temperature.We analyzed the surface morphology of combustion synthesized In₂O₃ active layer.Finally we fabricated the device with a combustion synthesized In₂O₃semiconductor layer and it showed a carrier mobility of 0.23cm²/?V·s?and I_on/I_off ratio of 6.6×10³.