Study Of 600GHz Detector Based On Schottky Barrier Diode

TeraHertz(THz)waves is the part of the electromagnetic spectrum with wavelengths ranging from 3mm down to 30?m.That is,from 100 GHz to 10 THz covering the upper part of millimeter waves(30~300GHz),the whole range of submillimeter waves(300GHz to 3THz),and the lower end of infrared waves(from 3THz to visible light).The THz band has found many potential applications: remote sensing of the Earth's surface and atmosphere,broadband high data-rate indoor(e.g.,smart home)and short-range outdoor wireless communications,imaging for security,medical,and other purposes.As a key component of the terahertz direct detection system,the detector can be used to convert the amplitude information of a microwave signal into a baseband signal.At present,compared with the domestic in the terahertz detector,foreign research is relatively mature.The required terahertz detector or detector diodes are mostly purchased from abroad,the cost is higher.The diode,circuit,cavity,are completed by the domestic research institute,which make the detector have important engineering practical value.Firstly,InP-based Schottky barrier diode of the Institute of Microelectronics Research Institute and its processing technology are described,and the diode I-V characteristic curve is used to extract the diode intrinsic parameters.Secondly,after selecting the circuit substrate and the transmission line properly,we established the actual processing Three-dimensional electromagnetic model to get the parasitic parameters,according to the actual size of the diode layer.The simulation result was imported into ADS in the form of SNP format with the intrinsic SPICE model to establish a complete diode parameter model.And then input probe transition is designed by HFSS to perform the whole nonlinear detector circuit harmonic balance simulation with the diode's complete parametric model,through the ADS and HFSS co-simulation to get the detector input and output matching Structure,the detector circuit design is completed.Finally,The 600 GHz narrow-band terahertz waveguide detector is fabricated.By using the InGaAs/InP material system,the feature of the low barrier of diode is obtained which greatly improves the performance of the detector.When the input power is very small(about several ten nWatt),the lowest voltage response sensitivity is 843 mV/mW,the maximum is 1763 mV/mW.The proposed waveguide detector has the characteristics of simple structure,compact size,low cost and high performance,and can be used in a variety of applications such as imaging,molecular spectroscopy,atmospheric remote sensing,etc.