Research On The Characterization Technique For Irradiation-proof Competence Of Schottky Barrier Diode

To meet the demand of spaceflight electronic system for measurement of SBD radiation-proof competence, a research is performed in this paper on SBD's radiation damage effect and the relevant characterization technique of radiation-proof competence, by means of theoretical research and experiment data analyses in a ⁶⁰Coγ-ray radiation experiment. A ⁶⁰Coγ-ray radiation experiment is undertaken, in which both the electrical characteristics and the 1/f noise characteristics of the device under test are measured so as to launch a detailed analysis into the micro-scope damage mechanism of the device and perform a in-depth research into the effect of radiation caused damage on SBD's positive and reverse I-V characteristics, as well as its 1/f noise characteristics, and choosing the leakage current, breakdown voltage, and the fitting parameter B of 1/f noise power spectrum intensity to characterize SBD's radiation-proof competence.It's showed that: the ionizing effect caused by radiation, which involves the rising of interface states in the passivation layer of the device's surface, could lead to the degradation of the device, the decrease of the reverse breakdown Voltage, the increase of the drain current, as well as the significant increase of the 1/f noise level, however, little changes is caused to the positive electrical characteristics. The radiation induced interface states which change the distribution of interface state density, and moreover modulate the Schottky barrier height and increase the velocity of recombination in surface, lead to the degradation of device performance as well as the significant increasing of 1/f noise level.Based on the research of the mechanism of radiation damage and total dose effect and the generating mechanism on Schottky barrier diodes(SBD) , and model of the mechanisms of carrier mobility fluctuation and carrier number fluctuation of 1/f noise, the effect of radiation damage on 1/f noise of SBD was studied in this paper. Then, a 1/f noise based characterization technique for SBD's radiation-proof competence is proposed in this paper, by which the device's non-destruction screening could be realized through the character parameter and National Standards of Device Quality for Military Utility. The experiment result validated that: the higher noise level and the larger deviation from the standard value do indicate the worse reliability and poorer radiation-proof competence, which implies a higher probability of failure for the device to work in irradiation environment.