The Preparation And Characterization Of ZnO Film,NiO Film And ZnO/NiO Heterojunction Structure

ZnO is a direct wide band gap semiconductor,its band gap is 3.37eV,its absorption edge is in the ultraviolet band and has a good optical transmittance in the visible light range.Its optical and electrical properties will be effectively enhance with the doping of A1 and other elements,Mg and other elements can change the band gap of ZnO crystal and to achieve a continuous adjustable forbidden band width.So the recent research on ZnO mainly focused on the development of the optoelectronic devices just like UV-emitting devices,laser diodes.But intrinsic ZnO is n-type semiconductor and It is difficult to.prepare the excellent performance and stability p-type ZnO due to its self-compensating effect,so many people pay attention to the development of ZnO heterostructures.NiO is also a direct wide band gap semiconductor material,its band gap is 3.6eV-4.0 eV and it is a kind of intrinsic p-type semiconductor,and it is widely used in sensors,capacitors and semiconductor optoelectronics and other fields.So in this paper,n-ZnO/p-NiO heterojunction was fabricated and its properties were analyzed.Hope that it is helpful to the development of ZnO-based semiconducting materials.At first,ZnO thin films were prepared by magnetron sputtering,and the preparation parameters were adjusted like substrate temperature and percent oxygen in the sputtering atmosphere,to explore the impact on its performance.And the influence of Al³⁺ doping on the electrical properties of the films and the effect of Mg²⁺ doping on the properties of the films were discussed by doping A1³⁺ and Mg respectively.And a transparent oxide conductive thin film with good optical and electrical properties was prepared.Then,NiO thin films were prepared by magnetron sputtering,And Ni1-xCuxO thin films with excellent electrical properties were obtained by doping Cu2.Then,the process parameters such as substrate temperature,percent oxygen content in sputtering atmosphere were changed,and the samples were obtained and discussed.And Ni1-xCuxO thin films with better crystal structure and photoelectric properties were obtained.Finally,the n-ZnO:Al/p-Ni_0.9Cu_0.1O heterojunction was fabricated and its rectifying effect was analyzed,and then the effects of annealing and intercalation of i-ZnMgO interlayer on the electrical properties of pn junction are discussed.