Study On The Relationship Between Incident Angle Of High-energy Ion Implantation Process And Uniformity Of High-voltage Device Deep Well

The application of power chip based on high-voltage device are more and more used in the drive IC,power management,switching control.High stability process can bring high yield and low cost.The deep well process affects the device performance and yield for cone angle effect in high-energy implantation process and channeling effect,causes the poor uniformity ofimpurity concentration distribution and electrical characteristics.For the stability of implantation process and yield improvement,this paper mainly studies the implantation tool cone angle structure and the mechanism of channeling effect,finding the relationship between incident angle of high-energy ion implantation process and the uniformity of high-voltage device deep well,And the excellent process recipe will be selected and be used in chip production to verify the electrical parameters of final product's uniformity and repeatability characteristic in the improvement experiment.And last to verify the yield's improvement.