Simulation On The Effect Of Punchthrough Stop Implantation Process Deviation On The Performance Of NMOSFET Device

The active channel region of scaled CMOS devices is an area of intense process characterization and development, and advanced ion implantation applications characterized by complex lateral and vertical doping profiles in the channel are required to allow implementation of submicron transistors in mainstream production.Punchthrough implant is the best example of this.Ultra shallow junction devices are becoming increasingly sensitive to shifts of ion beam angular properties and dose accuracy. Beam divergence and beam steering effects in Punchthrough Stop implants could significantly shift device characteristics. In this thesis,the requirement of Untra shallow junction devices to implantation precision is reviewed.The Computer Software Simulation is used to analyse the effect of punchtrhough stop implantation precision on the performance of MOSFET device (low to the 36nm junction device).The deviation of ion beam angel property is analysed quantificationally to prove the necessary of ion beam angle precison control to the formity of untra shallow junction.