Based On Atomic Layer Deposition Of High-k Gate Dielectric Material Characteristics Of The Device

As we know that Moore's law have quickly come to an end, integrated circuit size continues to decrease, however, integrated circuit size reduction is also facing more and more challenges, MOSFET?metal oxide semiconductor field effect transistor? device the size of a small device in performance and reliability are big problems. Therefore, from the high k gate dielectric material side, in improving the performance of the device, there is a great prospect.In this paper, based on the atomic layer deposition technology and the current mainstream high k materials, a new type of high k material, AlN atomic layer deposition technology is studied. The main purpose of this paper is using atomic layer deposition on silicon deposition of AlN thin films, and after coating lithography metal evaporation of preparing capacitor, by atomic force microscope AFM scanning the surface morphology and the capacitance of the test CV and the I-V curve to analyse the thin film performance. Since ALD is a self limited growth, in the preparation of thin films and different deposition temperature and plasma growth pattern, different power of plasma bombardment on the film growth rate and the uniformity of the deposited films have different effects.The experiments in this paper, in the growth of AlN thin films are controlled by temperature, plasma power, plasma NH₃ pulse time growth parameters to independently study the influence of various parameters on the deposition of thin films.After the surface morphology of the films were evaluated and electrical characteristics and XPS spectra analysis, finally found, in a certain range of temperature, increasing plasma power and extend the NH₃ plasma pulse time is conducive to enhance the properties of the films, increase the growth rate, less leakage, lack of less depression. However, due to its self limitation, the parameters will reach saturation at 300 C, 80 W, 5 s is the most suitable for the growth of AlN thin film growth parameters.Elevated temperature and increasing the plasma power will improve the precursor chemical activity and precursor chemical adsorption and chemical reaction more fully, as for NH₃ plasma pulse time, apparently in a certain range increased the amount of reactant, for the reactive deposition of more favorable, growth conditions more suitable health grow AlN thin films with optimal performance.