ZnO Nanowire Pn Junction Ultraviolet Detector:Fabrication And Photoelectric Properties

Due to their wide potential application in military, scientific testing, optical communication etc., ultraviolet detectors(UVD) have attracted a great deal of research interest. As an important ?-? group wide band gap semiconductor with a lot of advantages, such as low-temperature synthesis, rich material source, low cost and environmental friendly, ZnO has become an excellent choice for UVD. Nowadays, thanks to the technological progress of micro/nano assembling, fabrication of nanoelectronic devices with bottom-up approach receives much emphasis of research.In this work, we used a FIB/SEM dual beam microscope equipped with gas injection system(GIS) and Ominiprobe nanomanipulator to cut, extract, transfer and weld single nanowire. This micro/nano assembling method is accurate, quick and efficient, especially fit for the fabrication of nanoelectronic devices.First, we synthesized high quality single crystal ZnO and p type Sb doped ZnO nanowires by chemical vapor deposition(CVD). Then, we fabricated a Zn O/Sb-doped ZnO nanowire pn homojunction UVD with the micro/nano assembling method, and detailed photoelectric properties were tested. The UVD exhibits several advantages:1. High sensitivity and stability. At- 0.1 V reverse bias under ultraviolet light illumination, the sensitivity of the UVD was 26.5.2. High response speed. At- 0.1 V reverse bias under ultraviolet light illumination, the rise time and decay time of the UVD were estimated to be 30 ms.The micro/nano assembling method is very suitable for the fabrication of specific nanoelectronic devices with bottom-up approach, and also a convenient and efficient way to study electrical properties of nanomaterials. The nanodevice via this method has wide potential applications.