| Photodetectors have a wide range of applications in military and civilian fields,such as missile guidance,infrared remote sensing,industrial control,and optical communications.According to the working wavelength range,photodetectors can be divided into:ultraviolet photodetectors,visible photodetectors and infrared photodetectors.Among them,the ultraviolet photodetector has more application value and potential.Titanium dioxide?Ti O2?has a forbidden band width of 3.0 e V,which is one of the hot materials for preparing ultraviolet photodetectors.In addition,the Group10 precious metal transition chalcogenide?NTMD?has attracted the attention of many researchers due to its excellent properties.This paper mainly studies the ultraviolet photodetector based on Pt Se2/Ti O2nanorods array Schottky junction.In this thesis,a Ti O2nanorods array is grown on the FTO substrate by hydrothermal method.The Ti O2nanowire array has a strong light trapping effect.The Pt Se2thin film was prepared by direct selenization,and then the Pt Se2thin film was transferred to the Ti O2nanorods array with Na OH solution to obtain a Pt Se2/Ti O2nanorods array Schottky junction photodetector.The Pt Se2/Ti O2nanorods array Schottky junction device showed a clear response under ultraviolet light,but no response to white light.Through electrical testing of the device,it was found that the Pt Se2/Ti O2nanorods array UV photodetector has an excellent Ilight/Idarkratio of 5.5×104,a responsivity of 57m A/W,and a specific detectivity of 8.36×1011Jones under the illumination of a 365nm light source.The rise time and fall time are 0.19s and 0.44s,respectively.The ultraviolet photodetector also can be used of image sensor.Finally,the device can maintain good performance after being stored in the air for 5 weeks,and its stability is very good.The research results show that the Pt Se2/Ti O2nanorods array Schottky junction UV photodetector has great potential applications in the field of optoelectronics in the future. |
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