| Zinc oxide(ZnO)is a wide-bandgap semiconductor of the II-VI semiconductor group with high electron mobility.Compared to other ZnO nanostructures,the higher aspect ratio(large surface to volume ratio)of 1D ZnO NWs offers highly desirable applications either as a transparent transistor or as a light-emitting device in the blue-to-ultraviolet region.This study aims to synthesize 1D ZnO nanostructures and explore the possible applications of these nanostructures in uv photodetectors.Results are as follows:Firstly,zinc oxide nanowires were prepared on a variety of substrates by hydrothermal deposition process that optimized by adjusting precursor concentration,reaction time and additive types.The nano-surface morphology characterization and electrical properties of the ZnO nanostructures were analyzed by scanning electron microscope and electrical measuring instrument.Secondly,ZnO nanostructure arrays have been synthesized by photolithography on silica gel and polydimethylsiloxane over a large area,then morphological evolution of ZnO nanostructures at different positions of the substrates were studied;Meanwhile,oxygen chemical diffusion was used to grow ultra-long nanowires-the length-diameter ratio was up to 400-on ceramic substrate,which may contribute to the development of high-sensitive photoelectric detectors.Then,photoconductive uv detector consists of single ZnO nanowire was prepared by focusing ion beam.The properties of single ZnO nanowire with different diameters were compared.We found that the ratio of light to dark current and the detection sensitivity were increased as the diameter decreased.Further,photoconductive uv detector with vertical structure was also prepared.Compared with single zinc oxide nanowire device,the light and dark current of these vertical photoconductive uv detector increased 289% as well as higher detection sensitivity.In conclusion,the synthetic method in this study is simple and has a good application prospect. |
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