The Current Transport Property Of 905nm Semiconductor Lasers With Multi-active Regions

High power pulse semiconductor laser can be widely used in laser radar, ranging, medical treatment and vehicle collision avoidance system. In recent years, the laser ranging and pumping system continue to develop towards large power and small size, which requires 905 nm high power semiconductor laser with high power, small current and narrow divergence angle and so on. 905 nm semiconductor laser with multi active regions can produce several times higher output power than the conventional semiconductor laser under the same current, it has the characteristics of small current and high power, so 905 nm semiconductor laser with multi active regions is favored, it has become the main direction of 905 nm high power semiconductor laser.The coupling phenomenon will occur when the distance between multiple active region of the semiconductor laser with multi active region decreases, and non-coupling phenomenon produced by the increase of distance between multi active region will cause serious current expansion, this paper mainly simulates the current effect of transmission of the semiconductor material, and the distance between 905 nm semiconductor laser with multiple active region have what effect on current,then theoretically analysis of current distribution. Introduced lithography and etching and packaging process in device fabrication process and preparation of the 905 nm semiconductor laser with double active regions, and to experimental data to verify the theoretical simulation. The main contents of this paper include:1. The development of semiconductor lasers at home and abroad and the application prospects are studied, and the working principle of multi active semiconductor lasers is analyzed.2. Starting with the current continuity equation and Poisson equation, the distribution of potential and current density of semiconductor materials is solved.3. Based on the semiconductor material, the two-dimensional current transport model of multi active semiconductor laser is built by the formula of quantum well and tunnel junction. The potential and current density distribution of dual source semiconductor lasers are solved, and the simulation results are analyzed.4. The 905 nm double active region semiconductor laser with a width of 100 ?m and a lead hole width of 95?m and a cavity length of 2000?m was successfully prepared, and its I-V characteristics and spectral measurement were performed.