| The MIM(Metal/Insulator/Metal) light emitting tunnel junction is an important research field of the optical-electronics. The light emission from the MTM tunnel junction is mainly due to the SPPs (Surface Plasmon Polaritons) excited by the tunneling electronics through the insulator between the two layers of metal films and their couple with the surface roughness subsequently.MTM tunnel junction is studied to understand the micromechanism of its light emission. Based on the MgF2randomly rough surface and the definitely rough surface by the SiO2self-assembly method, the junction is successfully fabricated by evaporation film-coating films in vacuum with two kinds of roughness. According to the observation of the light emission properties of the two junctions by appling a dc voltage, it can be find that the junction begins to emit the red light at about3V. In addition, the four-point method is applied to measure the I-V characteristics and the negative resistance phenomenon is found in the junctions, which can be explained by the model of bounding electrons. Combining with the testing and analysis of I-V curves and Auger spectrum, the phenomenon of its light emission attenuation is explained. In order to improve the light emission efficiency, the MIIM junction with two layer insulators between the top and bottom metal layers is fabricated. The results show that its light emission stability, as well as its critical and breakdown voltage, is superior to that of MIM junction. What’s more, its efficiency is also about two times higher than that of the MIM junction. This phenomenon is caused by the resonant tunnel of tunneling electrons.In the end, some advice on the research about structure and properties of the junction in the future is given. |
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