Design And Fabrication Of 2μm Bipolar Cascade Laser

2～5μm in the infrared atmospheric window is very important, work in the band laser in the military and civilian areas are important in many applications. In the thesis we have antimonide materials prepared 2μm InGaAsSb/AlGaAsSb bipolar cascade laser, combined with the tunnel junction optical, electrical and other characteristics of the analysis. Choose smaller band gap, high tunneling probability, and has a higher refractive index of GaSb as a 2μm wavelength radiation InGaAsSb/AlGaAsSb laser diode tunnel junction material. And select the Be and Te were used as p-type and n-type doping agent, were prepared by high-quality tunnel junction, p+ GaSb thickness of 30nm, n+ GaSb thickness is 60nm. We use V80H solid-state source molecular beam epitaxy equipment to GaSb, InGaAsSb/AlGaAsSb strained quantum wells and other materials for the epitaxial growth. Through X-ray double crystal diffraction and photoluminescence (PL) method of the InGaAsSb/AlGaAsSb strained quantum well lasers basic properties of epitaxial material. X-ray diffraction curves measured in the emergence of four satellite peaks, PL spectra measurements the emission wavelength to 2μm. We are in a multi-quantum well materials, based on the use of heavily doped GaSb tunnel junctions for more than two coupled quantum well lasers, the growth of new structure design and epitaxial films, post-production process by laser to obtain a preliminary device results, room temperature lasing wavelength of 2.097μm.