Study Of On-chip Integrated Optomechanical Transistor

With the fast development of network communication, the integrated-circuit-based traditional interconnection faced their huge challenges in the communicate distance, data transmission speed and power consumption. To break the limitation of “electronic bottleneck” effect, people need to seek a new information carrier for effective transmission. Photon has became the priority with its natural advantages. The photonic computer, the substitute for electronic computer, is no longer a remote concept due to the development of the photon technology. A photonic transistor is an important component of the photonic computer and is the symbol of photonic computer's operation ability. Photonic transistor is the photonic device that utilize one light beam to control another light beam. Compared to electronic transistor, the merits of photonic transistor include faster operation speed, lower power consumption and smaller package. On the other hand, with the fast development of integrated optical circuits, the realization of photonic computer and large-scale integration has attracted more and more interests. And silicon-based integrated optical circuit is compatible with the Complementary Metal-Oxide-Semiconductor technology, the raw materials are abundant and at a low cost. All the merits of the silicon-based integrated optical circuit have made it the first platform to integration. Thus, the study of photonic transistor based on silicon devices is of great significance. In addition, with the discovery of optical force and the further development of the theory, an on-chip integrated optical device can work under a new mechanism by inducing the optical gradient force into the integrated photonic circuits.In this thesis, several studies of photonic transistor based on silicon-on-isolator(SOI) Mach-Zehnder interferometer(MZI) and microring resonator(MRR) utilizing optomechanical induced transparency effect are presented as follow:(1) The research background and research progress of photonic transistor as well as the development of the silicon based integrated device are introduced.(2) The category and calculation of the optical force, the methods to enhance optical force as well as the general structures with optical gradient force have been analyzed. The optical force can be divided into optical gradient force and optical radiation force according to the different generation mechanism. The methods to enhance the optical gradient force include improving the optical quality factor and improving the mechanical quality factor. The general structures with optical gradient force include single mode control waveguide with nanostring structure and microring resonator which is suspended from substrate.(3) Photonic transistors based on SOI MZI and MRR utilizing OMIT effect are proposed with theoretical analysis, device fabrication and experimental measurement. The response frequencies of the two optomechanical transistors can be optimized by changing the parameters of the device.