Etched Diffraction Gratings Based On SOI Platforms For High Speed Optical Communication Systems

With the rapid development of modern society, the relationship between people and the Internet has become more and more close. There are more and more emerging Internet modes: mobile communications, big data, cloud computing. As a result, the transmission capacity of optical communication systems is growing exponentially. Both the Ethernet system and the data center put forward higher requirements on the rate and energy consumption of optical communication systems. While the traditional optical transceiver module and the key optical router can not meet the needs in the size and power consumption. Silicon-based photonic devices with photon as the information carrier, not only have many advantages, such as ultra high bandwidth, anti-electromagnetic interference and low energy consumption, but also make high integration and low power consumption photonic integrated devices becoming possible. Photonic devices with wavelength division multiplexing functions are important components in high speed optical communication systems due to the multi wavelength signal transmission in a single waveguide. In this thesis, we are devoted to the study of silicon-based de/multiplexers:ecthed diffraction gratings (EDG).In this paper, the basic principle of EDG is introduced firstly, including its geometrical structure, working principle and basic characteristics. The design method and numerical simulation method are presented.Then, for the application of all optical routing in high-speed optical communication system, a 4×4 EDG wavelength router based on the 220 nm silicon-on-insulator (SOI) platform with a 10 nm channel spacing is designed and fabricated. Firstly, the principle and simulation results of the EDG router are introduced. And the following fabrication process are presented. Finally, the measurement results are discussed. And the loss uniformity problem and the improving methods are analyzed.Besides, polarization-insentive EDGs based on the 3 ?m SOI platform with the channel spacing of 20 nm and 4.5 nm based on are designed and fabricated, which can be used as de/multiplexers for high speed Ethernet in 40/100Gbase-LR4 systems. A detailed analysis of the design principle and method to suppress the crosstalk caused by high order mode are presented. The design of the overall structure and simulation results are given. Then the process of fabrication is introduced, and the measurement results are analyzed.