Study Of Polarization Multiplexer And Demultiplexer Using Micro-Ring Resonator In Silicon Slotnanowires

With the rapid development of optical interconnect network, together with the communication technology, its communication capacity and those related technical problems in integrated devices are greatly required to be resolved. To meet the ever-increasing demand of communication capacity, the high density integrated on-chip silicon photonic devices are utilized to overcome the limits of traditional interconnect technology. Recently, various multiplexing techniques have been used, e.g., wavelength division multiplexing, to increase the communication capacity. It proposes a novel polarization multiplexer/de-multiplexer, compatible with the wavelength division multiplexing on-chip system using micro-ring resonator.Firstly, applications of polarization multiplexing system are discussed in the fields of silicon photonics and photonic integrated circuits, and corresponding technical problems related to micro-ring resonators are put forward. Then the coupling features of micro-ring are studied in detail, meanwhile, the numerical results are also presented.Next the bending loss and polarization properties of the slot waveguide are analyzed. Based on these results, a compact polarization multiplexer/de-multiplexer is proposed, where the two regular silicon waveguides are used as the input/output signal channel (bus channel), and the micro-ring in slot structure is utilized as polarization/wavelength selection component. A full-vectorial frequency-domain finite-difference method is applied to study the modal properties of silicon-based regular and slot waveguides, and the results show that the two polarizations are separated efficiently. A three-dimensional finite-difference time-domain method is used to analyze the transmission characters of the proposed device. Results show that the extinction ratio and insertion loss of the transverse magnetic/electrical mode is-26.12/36.67 dB and 0.49/0.09 dB, respectively.Finally, the tolerance to structural parameters for the proposed polarization multiplexer/de-multiplexer is studied in detail, and the evolution of the excited field through the device is also presented.