Correlation Analysis Of TID And HCI Effect On Nanoscale MOS Devices

Space station, artificial satellite and other space equipment in the space environment will be affected by reliability effect and the total dose radiation effect for a long-time. In this paper, the influence of the reliability and the total dose radiation effect in the space environment is analyzed. The relationship between the total dose radiation effect and the hot carrier effect of the NMOS device is studied. The influence of these effects on electrical parameters of the device is analyzed by using Sentaurus-TCAD software. The simulation attempt is done on the correlation of the two effects. Specific work is as follows:(1) TID effect on MOS nanoscale device is studied. Using TCAD Sentaurus software, the NMOS 65 nm device model was established, and the leakage current of the device was simulated under different dose conditions. The simulation results show that the leakage current of the device increase from 1.68E-09 A to 8.76E-07 A, and is about two orders of magnitude when the dose reaches 500 krad.(2) The influence of HCI effect on the size of MOS nanoscale devices and the model for predicting the lifetime of the hot carrier effect are studied. TCAD Sentaurus software is used to simulate the variation of the parameters with time under the HCI effect of NMOS 65 nm device. The simulation results show that the saturation drain current of the device is increased by 6% after the stress bias condition of Vgs=Vds=2V and the stress time of 105 s. According to the change of the parameters of the device is the power rate function of time, the power exponent is 0.39.(3) The possible correlation between the two effects is studied. The total dose effect leads to the increase of the electron concentration in the channel. The increase of the channel concentration will cause a large amount of electron-electron scattering in the channel. The results of the two will not be the result of simple stacking.