Design Of High-precision On-chip Temperature Sensor Based On 65nm CMOS Technology

With the upgrading of integrated circuit technology and the rapid development of electronic products upgrading continuous toward high frequency, highly integrated direction, the temperature of the chip becomes more and more high, the power dissipation of the chip is also more and more serious. While exploring the method of heat sinking, the integrated temperature sensor on the chip, it is also important to measure the temperature of a single chip or the system accurately. Under this background, on chip CMOS temperature sensor shows its unique advantages.Firstly, we designed the system on-chip temperature sensor, according to the requirment performance index and the application background, we selected fequency output temperature sensor based on the structure of the ring oscillator. Then, the paper introduced the circuit structure of the main modules in the temperature simulation module and the temperature sensing digital module, and compared the characteristics of the commonly used circuit structure of the main module. Finally, according to the application in RF Bluetooth chip, considering the accuracy, power consumption and cost factors, a kind of chip temperature sensor was designed which temperature measurement range larged and high precision, and we achieved that all the components are integrated in a single chip. The main circuit module consists of a voltage follower, a ring oscillator, a frequency measurement circuit and data conversion circuit etc. At the same time, in order to get higher precision, considering the precision and power, we used MATLAB tools to fit the three square function of the relationship between frequency and temperature.We designed the circle of the temperature sensor that we have studied by using G 65nm CMOS process in GLOBALFOUNDRIES Company and adopting the virtuoso tools which is provided by the cadence company. And each module of the circuit and the temperature sensor circuit is verified by using the spectre circuit simulation tools. Then we checked the DRC, LVS of the territory and extracted parasitic parameter using calibre tool, finally the post-simulation was carried out. The chip's working voltage of IO is 3 V and the core's is 1.2 V. The whole area is 196 ?m×172 ?m. The simulation results show that the measured temperature ranges from -55? to 125?, and the minimum measurement accuracy is ±0.8?.