Modeling And Design On Silicon-Based Ultraviolet Interrupted-P-Finger Photodiode

At present, market on the existence of ultraviolet detection system widespread sensitivity, low integration degree is low, the volume is huge, high power consumption and circuit of the photoelectric detection system which consists of a light-sensitive device, an amplifying circuit, readout circuit to achieve common and need to at least three pieces combination chip to complete the function, resulting in the photoelectric detection system is large and complex, power consumption is also very big. Therefore, the single chip integrated SOC(on chip System), that is, a single chip detectors and signal processing circuit and the integration of the readout circuit, to become the market's demand. At present, there is no CMOS technology under the single chip integrated UV detector system, and the research of high performance silicon based UV detector is the most basic and the most important step in the single chip integration.In this paper, the design of the silicon based cross finger like ultraviolet photodetector is a kind of high performance ultraviolet photodetector. In the traditional UV detector, low sensitivity, low integration, large volume and high power consumption. In addition, with the subsequent signal readout and processing circuit to achieve the single chip integration. First of all, according to the typical of ultraviolet photoelectric diode structure, through the theory of knowledge, understand the principle and structure, the use of TCAD simulation for the further research on the optical and electrical properties.Secondly, the original device structure was optimized by simulation, put forward the new structure and new UV detector devices based on silicon high sensitivity based on the structure of the TCAD simulation. The simulation results show that: the improved interdigitated ultraviolet detectors have better UV selectivity, lower dark current and breakdown voltage. In order to achieve the design of UV detector of high performance target.Finally, through the simulation identified on the final structure of the chip, based on 0.18 ?m CMOS technology platform designed in this paper, the fork to like ultraviolet detector layout drawing, chip, and the chip of the final test. This paper carried out a detailed test on the device, and a comparative analysis.