Research Of The Two-Dimensional Layered Material MoS₂ On Field-Effect Transistors And Memory Devices

In recent years, the two-dimensional?2D? layered materials have once again aroused people's attention with the discovery of graphene. Graphene have excellent performances in mechanics, calorifics and optics, but because of a lack of band gap will limit its applications in digital circuits. However, 2D-layered MoS₂ has a similar layered structure to grapheme, and with tunable band gap of 1.2 e V-1.9 e V, which shows the excellent electrical performance of field effect. The mobility is above 100cm2V-1s-1and a high on/off ratio up to 108, which displays its potential application in the field of conversion circuit, storage and so on. Compared with the resistance random access memory?PRAM? which has already met the requirement of high density information storage, but memory devices based on field effect transistor have better regulation. Many structures of the field effect transistor-based memory devices are the floating gate, this structure will limit the size of device, reduce the integration and increase the energy consumption.To solve the above problem, we optimized the electrical performance of the MoS₂ transistor in this paper, and introduced defects by oxygen plasma treatment based on the conventional bottom-gate top-contact transistor to realize the memory performance of the device. The main contents are as follows:1. On the basis of the traditional mechanical exfoliation method, the MoS₂ that we have been obtained have better crystallinity and larger size around 50 ?m. Based on the large-size MoS₂, the mobility of the device was higher than that under the same structure and same test condition compared with the current reported.2. By oxygen plasma treatment, we introduced defects into the conducting channel of the MoS₂ transistors to realize the charge captured and released. The transistor give a more than 37 V memory hysteresis window under a +40/-50 V gate voltage pulse for a write/erase current ratio of ¹02 and good stability. The advantages of this approach are simple preparation, high integration and low energy consumption, also predicted its prospect of application memory.