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Analysis Characteristics Of Voltage And Current Drive For Phase-Change Memory Cells

Posted on:2016-09-05Degree:MasterType:Thesis
Country:ChinaCandidate:Z B LaiFull Text:PDF
GTID:2348330479953220Subject:Software engineering
Abstract/Summary:PDF Full Text Request
Compared to other nonvolatile memories, high density, low power consumption and high speed wipe are the main characteristics of phase change memory. Testing phase change storage is an effective method to analyze its characteristics. In the phase change memory tests, voltage or current are used to measure its characteristic parameters generall y.However, in the experimental process, the inappropriate selection of voltage and current may result in inaccurate characteristic parameter measurement and even damage the devic e when measuring some parameters.Therefore, analyzing the differences of using current a nd voltage apart to stimulate phase change memory is more conducive to study the charact eristics of PCRAM.This paper mainly studies characteristic of phase change memory under the voltage and current incentive. It refers to the test system of PCRAM built by 4200-SCS semiconductor analysis system, the oscilloscope and chip peripheral circuit, as well as varieties of PCRAM's modeling approaches. Using HSPICE model combined with simulation of phase change storage control program implementation phase change unit heat accumulation in the continuous SET/RESET test simulation. According to the characteristics of PCRAM, we use 4200-4205- SCS PG2 pulse generating module and AD9665 laser diode driver chip build pulse current source of pulse amplitude and pulse width which is adjustable, in order to realize the current tests for PCRAM cells.We take advantage of the electrical model of PCRAM and the experimental study on characteristics of PCRAM under voltage and current drive,such as the SET/RESET operation,the current and voltage scanning, threshold point, error analysis, to summarize the difference of PCRAM between voltage and current source. Analyzing the parasitic capacitance in PCRAM, then tests it to find out the effect of the electric pulse parameters which is brought about by parasitic capacitance. Summarizes the experiment and simulation results, analysis the characteristic of PCRAM cells under voltage and current excitation and compared the differences between them.
Keywords/Search Tags:Phase change memory, Hspice model, Set/Reset, Voltage/Current drive
PDF Full Text Request
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