Thermal Simulation Of Reset Operation For Three-dimensional Phase-change Memory Cell

With the advent of the information age,the demand for data storage and processing capacity has grown exponentially,more and more attention has been paid to the research of new generation memory.In the new generation of non-volatile memory,phase-change memory has the advantages of minimal theoretical process,fast read and write speed and very strong data retention ability,which makes phase-change memory become a choice with great development potential.By using 1S1R(one selector,one memory),the storage density of phase change memory can be greatly improved while solving the problem of three-dimensional cross crosstalk.At the same time,since the reset operation of PCM is based on the Joule heat generated by the current signal,the development of PCM will be restricted by the high power consumption in the reset operation.Therefore,in this paper,the electro-thermal efficiency of a single phase change cell with 1S1 R structure in a Reset operation requiring the maximum temperature of 700? is studied in detail.Electrothermal analysis in this paper,by using the finite element analysis software ANSYS Workbench module,build the three-dimensional structure used in the 1S1 R structure transformation cell model,by using the method of control variables,to design a new type of phase change memory cell model,were studied under the electrode diameter size,metal insulation materials,thickness and metal isolation layer when using different structure design for the influence of the memory cell electric heating efficiency.The temperature distribution diagram of the memory cell was obtained by simulating the Reset operation of the phase change layer under current excitation.By comparing the effects of various variables on the amplitude of current pulse and temperature distribution,the effects of variables of phase change memory cell of 1S1 R structure on the electric heating efficiency are summarized and analyzed.Finally,based on the research results,a phase change memory cell with zigzag metal isolation layer cross-section is designed.Compared with the traditional phase change memory cell,the electric heating efficiency of the new phase change memory cell is improved during the Reset operation,and the temperature distribution is also better.In this paper,the thermal efficiency of 1S1 R phase change cell and the design of new phase change cell structure are studied,which can also contribute to the future application of three-dimensional cross-stack phase change memory.