Research On High Power Supply For Semiconductor Laser Based On LLC Resonant Converter

The semiconductor laser is constituted by laser diode arrays in series, which has advantages of small size, light weight and high electro-optical conversion efficiency. In the field of laser processing, or material processed directly, or as the pump source constitute optical fiber, discs and other solid-state lasers use before making process. LD driver is an important part of laser, so the research is meaningful. The purpose of the paper is the development of a high power supply for LD modules of high efficiency and high power factor.?The performance of the merits of LD driver in present market is analyzed. Ultimately proposes a high power supply for LD based on LLC resonant converter. It has two series stages, first stage is interleaved Boost PFC power factor correction circuit, and the second stage is a DC/DC converter current source circuit based on LLC resonant converter. Through the technology of active power factor correction in the system, to improve the power supply input power factor; by using interleaved technology and LLC resonant soft-switching technology, to improve the power density and energy conversion efficiency of the entire power system.?Against the power structure, various work modes of the circuit is analyzed. Through the theory analysis of power supply circuit, the advantages of the power system is described, I.e. both high energy conversion efficiency and high input power factor. Its mathematical model of power transfer and small-signal model are built. Furthermore, its main circuit is simulated by saber. The stability of the control loop and the entire power system is analyzed.?Combine theoretical analysis and simulation, for Germany DILAS Company E15.4Y-940.3-960C-VH8.1 type LD modules, the circuit design and parameters design of the entire power system is completed, a full load output: 17V/60A(1KW) of power supply is designed.?Experiments proved that the performance of the LD driver is good. While using the silicon chain which V-I characteristic is similar to LD as load, its input power factor is higher than 0.97, full load efficiency is up to 85%, which has the characteristic of high efficiency and high power factor. So the expected design goals is achieved.