The Determination Of Cu?Ga?In?Se In CuIn_xGa?1-x?Se₂ Thin Film Solar Cells By ICP-OES

In twenty-one centuries,because of the excessive traditional energy consumption and the increasingly serious pollution problem,human beings are facing the sustainable development of economic and environmental problems.In order to resolve these problems,people began to research the solar cells.Among all solar cells,the CuIn_xGa_1-xSe₂ thin film solar cells with the advantage of high conversion efficiency,strong radiation resistance,stable performance,low cost,light mass and flexibility are the most promising.The content and ratio of Cu,Ga,In,Se in solar cells have effects on the quality and performance of thin film solar cells.However,in complex process to produce thin film solar cells,it's difficult to control elements' components accurately and repeatability.Therefore,it is of great significance to measure content and ratio of elements and optimize production technology based on the results.At present the methods measured content and ratio of elements are usually of local characterization,poor precision and difficult operation.By contrast,ICP-OES is a valid method to measure content and ratio of elements for CIGS with faster speed,simpler operation,higher accuracy and precision.In this article,Inductively Coupled Plasma Optical Emiss ion Spectrometer?ICP-OES?was used to measure Cu,Ga,In,Se content of thin film solar cells by wet digestion.According to the property of CuIn_xGa_1-xSe₂ thin film solar cells,HNO3-HCl-HF system had higher decomposition efficiency.The dosage of solvent is 1ml HNO3+ 2ml HCl + 0.2ml HF chose by Blank standard addition recovery experiments and detection limit of elements;According to the relative contents and intensity of determined elements,two or three spectra should be chosen.Considering synthetically coexisting element interference,background interference,linearity range,we chosen Cu 327.395 nm,In 325.609 nm,Ga 294.363 nm,Se 196.026 nm as the analytical lines;The standard addition method and standard curve method were used to analyze element content respectively.Considering the linearly dependent coefficients and the results of dilution test and matrix interference experiment,the standard addition method was chosen to analyze determined elements quantificationally.The results measured by standard curve method were used as the estimated values of determined elements.The measured detection limits of determined elements are Cu 327.395 nm 0.003211mg?L,Ga 294.363 nm 0.03004 0 mg?L,In 325.609 nm 0.052040,Se 196.026 nm 0.061883 mg?L;Samples of TF59,TF60,TF70 were measured respectively.The average of determined elements were TF59: Cu 10.731 mg?g,Ga 4.948 mg?g,In 10.895mg?g,Se 31.068mg?g;TF60: Cu 10.337mg?g,Ga 5.131mg?g,In 10.925 mg?g,Se 28.869mg?g;TF70: Cu 10.829 mg?g,Ga 5.656 mg?g,In 9.129mg?g,Se 28.414 mg?g;The results were certified by precision and accuracy tests.The relative standard deviation and relative deviation were 0.64%-3.08%,0.01%-4.41%;0.66%-2.35%,0.11%-9.06%;0.55%-2.42%,0.02%-5.59% with high precision and accuracy.The recoveries were between 92.66%-108.25%.The experimental results were valid and reliable.And the important elements' content in thin film solar cells measured provide reference and basis for the production and research of thin film solar cells.