Optimization Of Quantum Dot Device Technology And Material System

As the quantum dots have a narrow full width at half maximum (FWHM),high quantum yield and other excellent optical properties and electrical properties, in the field of optoelectronics has a broad application prospects. The preparation of quantum dots by solution method has the advantages of simple operation and environment friendliness. The inkjet printing method has the advantages of substrate selection flexibility and direct patterning. The CdSe/ZnS quantum dots films were prepared by inkjet printing, and the CsPbBr3 quantum dots and composite films were prepared by dip-coating. This dissertation discusses the printability, stability and optical properties of the quantum dots.(1) The different substrates and different solvent systems can affect the morphology and stability of CdSe / ZnS quantum dots films prepared by inkjet printing. The dispersive component of different substrates determines the size of the printed single-drop film, and then verifies that it is feasible to adjust the size of single-drop by adjusting the dispersion component. For the different solvent systems, the Z value required to obtain the optimal solvent for the printed quantum dots is defined by defining the Z-value of the inkjet print stability parameter. In addition, the quantum dots film was prepared on the blue LED by inkjet printing.(2) The stability of water-soluble CdSe/ZnS quantum dot inkjet printing in the solvent mixture system was characterized by computer-aided characterization, and the stability was applied to the printing of the QR code and the detection of the substrate surface. Based on the assembly behavior of nano-materials and the correlation between the stacking morphology after solvent drying and the physical and chemical properties of the substrate surface, the method of obtaining and calculating the characteristic parameter M of the self-assembly mode of the nanomaterial provides a reliable and efficient method for detecting the surface characteristics of the substrate.(3) The CsPbBr3 quantum dots prepared by high temperature heat injection have a narrow FWHM (21 nm),well-crystallized and a band gap of 2.52 eV. CsPbBr3 quantum dot films and CsPbBr3/C8-BTBT composite films were prepared via dip-coating and drop casting. The optical properties of quantum dots were improved by the absorption of organic matter by the complex mechanism. The results showed that the luminous efficiency of the composite film was increasing by 44 % with UV light emission. Experiments show that the use of organic semiconductor C8-BTBT as a composite matrix, is expected to provide a new luminescence absorption channel of quantum dots, thereby improving the conversion efficiency of the film.