The Study Of The Application Of Metal Oxide TFTs In Digital Integrated Circuits

Thin film transistor(TFT) as a kind of very important device in the micro-electronics is wildly used in the industry of information display and sensing devices. The newly developed metal oxide(MO) TFT which channel layer is composed of oxide semiconductor has a very bright future especially in the integrated circuit area due to its advantages of high mobility, simple process, good transparence, low sub-threshold voltage and high current on/off ratio.This article firstly extracts the electronic parameters and sets up the reliable models fitting the characteristic of MO TFTs for the design of the circuits. Then a newly improved not-gate circuit is proposed to verify the models. The experiment shows that, the proposed not-gate has great advantages in power consumption, speed and the output swing.Moreover, there would be lots of advantages such as low cost, narrow bezels, uniform signals and highly reliability by using TFTs to integrated gate driver to replace the scan IC. This article proposed three kinds of gate drivers which are clock-controlled inverter type, high speed type and DC output module type. The results show that: 1) The clock-controlled inverter type could be simply integrated with less occupied area, newly inverter and low frequency clock are design for low power consumption. The tested power is 380μW for ten stages. Also, this gate driver is successfully applied in the AMOLED panel with 200(RGB)×600 resolution. 2) The high speed type could be stable by using double feedbacks, and the high speed could be achieved by optimizing the parameters. The tested outputs for the 20 stages after 48 hours show good characteristics. It could be used in high-speed demanded displays such as 4k resolution with 120 Hz. 3) The DC type output module type gate driver could prolong the using time of the product because of the low power consumption contributed by reducing the power consumption of the parasitic capacitors in the TFTs. Thus the user experience can be improved. The power consumption for one stage is only 8.71μW.Last but not least, it is a hot spot in the science to integrate radio frequency identification(RFID) tag by employing TFTs, especially for the flexible RFIDs. This article would integrate the RFID tag on the glass based by MO TFTs. Driven by DC power of 5V, the inner clock frequency is 2.8k Hz and the output dates match the storage dates with output voltage of 3.2V The experiment provides new oration for the wildly application of MO TFTs.