Air Stable Flexible/Transparent Polymer Electrically Bistable Devices

Although inorganic silicon material storage devices has been applied widely in modern storage devices, they are limited for the further application to the next generation electronic devices due to their disadvantages:complex process, high production cost, Moore’s law. Therefore, organic polymer electrical bistable devices become one of most popular research of the new storage materials because of low production cost, simple process, mini-size (nanometer level), and flexibility,. This work demonstrates the flexible electrical bistable devices based on transparent polymer films by spin coating.The main content is as follows:(1) The different devices were prepared by spin coating including:the ITO/PEO/A1 devices; the ITO/ PCBM/A1 devices; and the ITO/PEO/PCBM/A1 devices. The morphology of the different devices was studied with optical microscopy, and the influence of different annealing temperature on the film morphology was investigated. The I - V, C -V, circulation pulse and duration (I-t) measurements on the ITO/PEO/PCBM/A1 devices were performed to study the electrical characteristics of the devices. The device switches is more than 103, duration test is more than 10000 s. Finally, the experimental results (I-V) were fitted to explain the working mechanism of the charge transfer in the memory device.(2) For the practical application of the polymer electrical bistable devices, the flexible substrates (PET) were applied to fabricate the PET/ITO/PEO:PCBM/A1 electrical bistable device,.The effects of annealing temperature, thickness, curvature radius, and the length of exposure to the air were studied on the electrical bistable devices,.To study the device stability, the cycle pulse and the duration measurements were performed. It is concluded that the preparation of flexible transparent electrical bistable device can realize more than 103 switches, duration test is more than 10000 s, it is can also keep more than 102 switch after 350 h exposed to the air, the curvature radius is small than 8.06 mm in the bending test. Finally, the experimental results (I-V) were fitted to explain the working mechanism of the charge transfer in the memory device.