Researches Of Organic Electrical Bistable Devices Based On Insulating Polymers

In recent years, the development of inorganic memory devices are restricted by their characteristics, such as:high-cost, complicated progress, limited capacity of storage and so on. Because of this, people would like to pay more attention to organic memory devices. For instance, organic electrical bistable devices have attracted the attention due to its advantages such as low-cost, simple progress, flexibility, large capacity of storage and so on. It has the potential to lead to a new era of memory devices. At present, the insulating polymers have been used to fabricate the organic bistable devices widely, such as:poly(methyl methacrylate) (PMMA), Polyvinyl pyrrolidone (PVP). The devices could be fabricated conveniently and preserved easily due to the dielectric properties and stability of the insulating polymers, this made the devices become more practical. So, the researches of devices based on insulating polymers which combined with nanoparticles or other polymers become more and more popular.In this paper, the PEO capped ZnO nanoparticles and the polymer poly(3-hexylthiophene) (P3HT) were prepared to fabricate the organic bistable devices with the help of PMMA. We studied the electrical bistable performance and the principles of the devices. The main contents are listed as follows:(1) At first, the ZnO nanoparticles were synthesized by a one-pot water bath heating reaction, the X-ray diffraction (XRD) and Transmission Electron Microscope (TEM) were used to represent the ZnO nanoparticle’s characteristics. Then, we blended the PEO and ZnO nanoparticles, and used Atomic Force Microscope (AFM) and Photoluminescence (PL) spectrum to reflect the morphology of PEO:ZnO composite film and to evidence the passivation effect of PEO. Next, we fabricated devices with a structure of Al/PMMA/PEO:ZnO/ITO, observed it’s cross-section through the Scanning Electron Microscope (SEM) and measured the electrical characteristics of it. At last, the fitting about the I-V curves were used to discuss the principle of our devices.(2) At first, the P3HT and PMMA solutions were spin-coated separately to fabricate the bilayer device:Al/P3HT/PMMA/ITO, and also mixed in solution together to fabricate the hybrid layer device:Al/P3HT:PMMA/ITO. The Scanning Electron Microscope (SEM) were used to observe the cross-section of bilayer device. Then we measured the electrical characteristics of both of them. At last, the principle of our devices was discussed based on the fitting of I-V curves of the bilayer device.