| ABSTRACT:The development of modern information technology require memory with the characteristics of high storage density, ultrafast response rate and long service life and the organic semiconductor memory has become a new potential memory devices. Organic electrical bistable devices (OEBDs) exhibit two different states of conductivities at the same applied voltage and show the advantages of low cost, easy processing, small size, low power and high storage density. OEBDs have attracted more and more attentions due to their wide potential applications in information storage and logic circuits.In this paper, PMMA and C6o blend films were prepared, and the effect of substrate and solvent on the film forming properties were studied. The ITO/PMMA:C60/Al devices were fabricated and the electrical bistability were characterized by voltammetry. Nevertheless, the technology at this stage has not yet matured, it still has the reference value for the development of organic memory technology. The specific experiments and results are listed as follow:Mixed solution PMMA and C60fullerene were spinning coating with glass, quartz glass and ITO as substrate. The surface morphology of thin films using atomic force microscopy were characterized, and effect of different solvent, ratio and substrate on the mixture of the films were studied. The results show, morphology of the films that using chloroform and benzene as solvent, on quartz glass substrate surface is the most compact and smooth. The surface roughness of the films increase with chlorobenzene and chloroform ratio becomes large.The ITO/PMMA:C60/A1devices were fabricated and the electrical bistability were characterized by voltammetry. When the applied voltage reaches a certain threshold, the current will have a mutation, read and write erase cycles can be repeated. The effect of the charge trap on the electrical bistability were analyzed. The threshold voltage of the devices is about6V and increases with RMS of the films. |
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