Ultra-thin Solar Grade Wafer Cutting Technology Research

Solar energy is the world’s most widespread and most secure cheap and clean energy, photovoltaic power generation is the most important way of using solar energy. PV industry chain from upstream to downstream comprise six aspects of silicon, ingots(Rod), slice, slice battery, battery components, applications systems. Solar grade silicon solar photovoltaic cell manufacturing cutting is a key part of the process, will further reduce the wafer thickness, to reduce the production cost of photovoltaic midstream stage has obvious economic benefits. Since silicon belong brittle materials, in the course of processing prone fragmentation, further reducing wafer thickness, while maintaining quality silicon, it is a major problem. Aiming at cutting thickness of 170 ~ 190μm solar grade silicon is the main content and direction of the paper.The main contents of this paper, the multi-wire cutting silicon process optimization viscose, sliced, unglued cleaning, sorting quality and other aspects of process parameters, auxiliary processes mortar online recycling principle and technology introduction, the main technical indicators and matching accessories experiment, the last of a multi-line cutting process appears significant anomalies cause analysis and countermeasures, as follows:(1) The composition and working principle of solar-grade polysilicon thin sheet cutting equipment, systematic analysis of the main components of MB271 equipment, working characteristics of the device components and working conditions introduced solar grade polysilicon thin film production processes. Through the process: You must pass a complete set of process, to ensure that after cutting the wafer surface quality, but also to ensure a certain degree of production efficiency, taking into account the maximization of economic benefits.(2) to study the mechanism of solar grade polysilicon thin sheet in a multi-line cutting process, ensuring ductile cutting in the cutting process, reducing the silicon surface abnormal situation. Through the study of the cutting mechanism and modal analysis to determine the main factors multi-line cutting lines, provide a theoretical basis to determine the processing parameters.(3) For ultra-thin solar grade wafer cutting process of the main factors, we carried out targeted analysis and experimental research, analysis and experimental research including key parameters for the guide wheel, mortar flow and temperature indicators on quality of silicon impact analysis and experiment, steel wire and experiments related factors, mortar online recovery key indicators were analyzed.(4) In order to better address the cutting process of the key exception, the paper cutting process marks a break in the line for the ultra-thin solar grade polysilicon film, TTV anomalies were studied and analyzed.The key factor in cutting through thin solar grade silicon analysis and experiment, summarizes the key factors affecting the index and the passing rate of silicon(guide wheel, mortar, silicon carbide, steel wire, piece rate), analyzes the impact indicators in this section Factors, Good for the parameters, the preliminary conclusions are as follows:(1) Compared with conventional wafer thickness, the paper cut by the 210μm wafer thickness down to 180μm or so, saving about 15% of silicon materials.(2) Compared with the prior art, this paper presents the influence of solar grade silicon cutting factors affect the phySiCal indicators, such as silicon carbide particle size, the viscosity of PEG, the index guide wheel alignment speed standardization of the steel wire.(3) Through this study, it is possible to reduce the thickness of the wafer, while the technical standardization process conditions, reducing production abnormalities.