Study On Reliability Technology Of TSV Interconnect Structure In The Multi-environments

The reliability of TSV(Through Silicon Via) interconnect structure directly affect the performance of the three-dimensional package device, therefore it has very important significance to study the reliability of TSV interconnect structure. This paper using the finite element numerical simulation method to study the reliability of TSV interconnect structure in 3D-TSV stacked chip package structure from random vibration reliability, thermal-structure coupling and temperature-vibration coupling reliability. And to optimize design TSV interconnect structure multifactorial and multi-objective under random vibration load.Firstly, the 3D finite element analysis models of 3D-TSV interconnect structure were developed. By using ANSYS the finite element analysis of the stress and strain distribution in the model was performed under random vibration load. The results show: In the random vibration conditions, the maximum equivalent stress and strain located in the lowest micro-bump at the most remote corners of the die. TSV height not only affects the maximum stress and strain of TSV interconnect structure, but also affects the distribution of stress and strain. Within the selected height range, when the value of the 75μm the maximum stress is minimum. When the micro-bump material is SAC387 the TSV interconnect structure has better reliability than it is copper. Lead solder Sn63pb37 has the better random vibration characteristics than other solder materials for micro-bumps. But lead-free solder SAC387 has the best random vibration performance for the purposes of the entire TSV interconnect structure.Then, by orthogonal design variance analysis it knows that TSV height has highly significant impact on the equivalent stress of TSV interconnect structures under random vibration load. The TSV height, the TSV diameter, the micro-bump diameter and the micro-bump height affect the equivalent stress of TSV interconnect structures in a descending order. The multifactorial and multi-objective optimization design based on orthogonal experiment and gray relational analysis, it obtains the optimal parameter level combination: TSV height is 50μm, TSV diameter is 40μm, the micro-bump height is 10μm, the micro-bump diameter is 70μm. Comparing with the initial results, the four optimization objectives of the optimal combination were optimized in varying degrees. Thus, by using the combination method based on orthogonal experiment and gray relational analysis it achieved the multi-objective optimization about TSV interconnect structure.Finally, the thermal-structure coupling analysis and temperature-vibration coupling analysis of TSV interconnect structure were analyzed. And analyzed the impact of different sizes parameters for TSV interconnect structure reliability under the two conditions. The results show that, in practice and application process of TSV interconnect structure, if it want to get a smaller size and higher reliability TSV interconnect structure, it must examine temperature effect and size effect affect the reliability TSV interconnect structure under thermal-structure coupling condition and temperature-vibration coupling condition.The results of this paper will provide the reliable theoretical basis and technical support for the practical application and the development of TSV interconnect structures.