Growth And Research Of Multiple Films For Surface Acoustic Wave Devices

This paper studies the equipment operation of hot-filament chemical vapor deposition and the influences of deposition parameters to the growth of diamond thin films. On this basis, studies the equipment operation of magnetron sputtering and the influences of sputtering parameters to the growth of ZnO thin films. Analyze the surface morphology、crystal orientation and electrical properties of ZnO/Diamond/Si multiple films, discusses the possibility of using in SAW devices. In this work, we have obtained the following results:1. Carbon concentration and growth temperature are the most influential parameters to the growth of diamond films. The deposition rate increases as the increasing of carbon concentration, but the quality of sp3 type reduces and the content of graphite increases when the carbon concentration is too much; nucleation and growth are slow when the temperature is low; but the uniformity is destroyed and even the Si substrate fused when the temperature is too high.2. Carbon concentration influences the orientation of diamond films: High quality(111)-orientation diamond films are achieved in low carbon concentration, because the thermodynamic function is evident in low carbon concentration; and high quality(100)-orientation diamond films are achieved in high carbon concentration, because the dynamic function is evident in high carbon concentration.3. There are several factors that the magnetron sputtering influences the growth of ZnO films: substrate temperature influences the c-axis orientation and the surface roughness; sputtering power influences the orientation and the growth rate; sputtering pressure and argon-oxygen ratio influences the thickness by changing sputtering particle number and free path.4. We have obtained good quality ZnO/Diamond/Si multiple films. The thickness and surface roughness of diamond film can meet the requirement of surface acoustic wave transmission. Through the Hall measurement, the electrical resistivity of ZnO film is about 109?, which can meet the requirement of surface acoustic wave devices.