Φ200mm Low Oxygen & Carbon Concentration CZSi Crystal Growth And The Computer Simulation

In this paper, part reconstruction is done based on the TDR-70 crystal furnace,and designing a new 16"complex heat system forΦ200mmCZSi crystal growth. This system reserves the core advantage of low heater. The emiting problem of crystal latent heat can be settled during the crystal growth of Φ200mm solar cell CZSi. After many experiments, Φ200mm solar cell CZSi can be pulled successfully.The result showing that heat screen and argon flow is the key points of Φ200mm solar cell CZSi growth.FEM(finite element method)is the most important computation method in the 20th century. FEM has become an important way to study semiconductor. Because of the large stuff of silicon ,complex structure of furnace and expensive cost, computer simulation is a best way to optimize design .In order to study the new heat system,we have calculated the heat zone of Φ200mm solar cell CZSi growth. Good theory explain also can be get from the simulation of Φ200mm solar cell CZSi growth at 16"heat system.