The Investigation Of High Power Semiconductor Laser With Low Loss

Aimed at 980 nm band semiconductor laser extensional structure, analyzed the influence high power semiconductor laser maximum output power and conversion efficiency is further improved, the main reasons for the loss mechanism, according to the research of the internal loss mechanism, find the method of reduce losses in the device and use Lastip software for 980 nm waveguide structure of high power semiconductor laser is optimized design, through the optimization Al of waveguide component and add low refractive index optical trap in waveguide layer, reduced the loss of the device, improves the output power and conversion efficiency of the device, and to get higher optical disaster damage threshold.In addition, the doping on the impact of 980 nm width loss within the waveguide structure, adopted three doping ways of wide waveguide structure fluctuation layer for doped waveguide, respectively, the mixing, n- n doping and n- p, finally found that n- n doping is more advantageous to reduce the loss of semiconductor laser, improve the conversion efficiency and power output.