The Study Of Class-e Power Amplifier Based On InGaAs MOSFET

Traditional silicon CMOS integrated technology follows the Moore Law to enhance working speed, increase integration level and reduce cost by continually reducing the feature size of device. However, it encounters technical and physical challenges with the nanometer era’s advent. InGaAs channel material has already become research hotspot of next CMOS generation because of its high electron mobility. Based on the the Institute of Microelectronics, Chinese Academy of Sciences devices and process, this thesis focus on InGaAs MOSFET power device and radio frequency Class E power amplifier design, and the main work is as follows:1. Based on the process condition of the Institute of Microelectronics, Chinese Academy of Sciences, InGaAs MOSFET power device and backvia process are both completed, the whole completed In GaAs MOSFET MMIC process is achieved.2. The 50 Ω/□ TaN film resistor, Si3N4 dielectric MIM capacitors and spiral inductors are studied and finished, which are compatible with the InGaAs MOSFET technological process. Based on the measured and MOM simulated datas of capacitor and spiral inductor, the equivalent circuit of capacitor and inductor are modeled. At the same time, the impact of various Al2O3 thicknesses MIM capacitors on DC and RF characteristics is also investigated in this paper, which does certain basis for the application of Al2O3 MIM capacitors in InGaAs MOSFET MMIC3. The whole InGaAs MOSFET model flow is completed from small to large signal models. We build the small signal model based on the fabricated InGaAs/GaAs MOSFET’s power device and carry out the small signal parameter extraction flow. IC-CAP EEHEMT large signal model is used to extract parameter, and then ADS software is adopted to finish following fitting work, and good fiiting results are obtained.4. Based on the large signal model of InGaAs MOSFET power device, a two-stage Class E radio frequency power amplifier is designed. When this power amplifier works at the drain voltage of 4V and gate voltage of-1.2V, it can output more than 30 d Bm 1dB Compressed power with above 27 dB power gain and over 65% PAE from 2.45 GHz to 2.55 GHz.