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The Research On Electromagnetic Interference Characteristic Of Charged Particles Produced By Hypervelocity Impact On Semiconductor Devices

Posted on:2016-04-15Degree:MasterType:Thesis
Country:ChinaCandidate:Y Y YuFull Text:PDF
GTID:2308330476450017Subject:Mechanics
Abstract/Summary:PDF Full Text Request
As the spacecraft accidents is increasing, Many scientists have found that:the electromagnetic damage is more dangerous to the spacecraft than mechanical damage. The charged particles produced by hypervelocity will interfer with the semiconductor devices and lead to their failure.The charged particles interfer with the semiconductor devices in two ways:they run away from the impact point and produce electromagnetic fields;they seep into inside of the semiconductor devices to make them work failure. We simulate the process of the debris impacting the spacecraft in the space by using a aluminum projectile impacting a aluminum target to find the interference laws.The main contents include:1) The charge distribution laws of charged particles produced by the hypervelocity impact is researched.Two device are designed to collect the charge in different directions.By the experiment the charge distribution laws of particles produced by the hypervelocity impact are found.When the projectile velocity is vertical to the target,the positive charge exsists in 54o-81o angle range;When the projectile velocity is 45o to the target,the positive charge exsist in 45o-90o angle range.Based on that a model of charge distribution law of particles is concluded.2) The mechanism that hazards of hypervelocity impact on semiconductor devices is researched.According to the charge distribution laws, the electromagnetic field is calculated, it is harmful to the semiconductor chip;If the charged particles seep into the PN junction,pin or electrolyte material of the semiconductor devices,they can damage the semiconductor chip too.3) It was found by the experiments that the semiconductor chip is apt to be damaged when they are placed in the position which is 63o-72oand 81o-90oto the impact target;The semiconductor chip made by field-effect tube is apt to be disturbed; The distance between semiconductor devices and impact point also affect the inference level;The disturbtion produced by electromagnetic field happened in 81o-90oangle range; There are cumulative damage on semiconductor devices produced by hypervelocity impact.
Keywords/Search Tags:Hypervelocity impact, Charged particle, Electromagnetic inference, Semiconductor chip
PDF Full Text Request
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