| It is demonstrated by plenty of experiments that, as the temperature varies, thetemperature constitutive parameters matrix of the semiconductor device will change.Accordingly, the distribution characteristics of the electromagnetic field will change. As thedownsizing and integration of the circuit and the device is widely used, the density of energyloss and the temperature in a circuit are increased. Moreover, high temperature seriouslyimpact on device operational reliability. Consequently, there are new requirement forelectromagnetic compatibility and protection.Since the device and temperature varies as time changes, it is hard to do the analytical testand measurement. The following paper proposes a finite-different time-domain method basedon the multi coupling field and build up the finite difference method and finite-differencetime-domain method (FDM-FDTD) for integration model of the electromagnetic field and thethermal field. That is, apply the finite difference method (FDM) to analyze the real-timecomputation of the target body heat conduction, apply the finite-different time-domainmethod (FDTD) to calculate the interaction between the electromagnetic wave and the target.Since there is a108difference in the speed of the thermal field and electromagnetic field, thetime scale are very different. The traditional FDM-FDTD does the iteration lonely whilecalculating the thermal field and electromagnetic field. This paper unifies the time scale, andmakes the iteration synchronization between the two fields. It will short the calculating timein a large extent. Based on the novel model, the following paper makes an analysis for heattransfer characteristics of different semiconductor device. The result of the numericalexperiment shows that inhomogeneous temperature distribution results in the constitutiveparameter of the target is inhomogeneous. The developing of the model can offer the technicalsupport for study electromagnetic interference and protection of the semiconductor device. |
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