The Research Of Al-doping MgO Layer Used In PDPs

As a result of plasma display panels(PDPs) has excellent color, large size, wide viewing angle, high brightness, fast response speed and high definition and other advantages, PDPs stand out from lots of flat-panel displays and become one of the best display terminals. But the disadvantages of PDP that high energy consuming and high cost limit the development of PDP. To improve the performance of MgO layer is one important method to improve the performance of PDP, which include doping other elements into MgO or using new materials to replace the MgO. According to the last research results, in this article, doping Al into conventional MgO is proposed to improve the performance of MgO layer. This work mainly includes the following aspets:1. Cubic-shaped Al-doping MgO powders are produced by using hydrothermal method. The morphology and crystal phase of the products are characterized by SEM and XRD. In order to get cubic-shaped crystals, all reaction factors are studyed to optimize the method. The shape of Al-doping MgO crystallites is regular, and the diameter is more than 5μm.2. The method of precipitation to produce Al-doping MgO powders is researched. The morphology and crystal phase of the products are characterized by SEM and XRD. The percent of Al cannot exceed 1% in the method of direct precipitation, if not Al cannot be doped into MgO crystal totally. And the products of the method of direct precipitation are fragments instead of cubic-shaped crystallites. The solution of metal alkoxides is hard to get and the percent of Al is hard to control when using the method of hydrolysis of metal alkoxides, while it is not suited for large mass production.3. The performance of PDP with Al-doping MgO layer is tested. The discharge voltage of PDP with Al-doping MgO layer produced by hydrothermal method would decease when the percent of Al is no more than 3%, while the value of firing voltage and sustaining voltage decreased by 16.3% and 15.7%. The discharge voltage of PDP with Al-doping MgO layer produced by the method of precipitation would decease when the percent of Al is no more than 1%, while the value of firing voltage and sustaining voltage decreased 9.4% and 8.6%.4. The time lag of PDP with Al-doping MgO layer is reseacrched. The time lag of PDP with Al-doping MgO will decrease from dozens of nanoseconds to 150 ns, no matter how much Al is doped into MgO, compared to PDP with pure MgO layer. And the time lag will decrease when the percent of Al or Xe increased.5. Two PDP driving powers are designed. One is single impulse power which is used one MOSFET switching tube, while the frequency is 50 kHz, the duty factor is 50% and the range of impulse can up to 800 V. The other is bidirectional impulse power which is used full-bridge circuit, while the frequency is 50 kHz, the duty factor is 50% and the range of impulse can up to 1000 V. The performance of the two powers is excellent, and it ensures the experiment performed successfully.