The Research Of ICP Etching Technology On The MEMS Temperature Sensors

As MEMS sensor application is more and more popular, the demand for its processing technology has been improved. As a key technology of MEMS device processing- the ICP etching technology, because of the etching process automation degree is high, the etching the surface vertical degree good, large area of etching uniformity and the advantages of less pollution, has been widely applied to the body in the process of silicon MEMS the highest depth/width etching. But because the mechanism of the ICP etching technology is complex, process parameters affect the etching result more, so the ICP etching technology is not mature enough on the whole, the specific performance in the absence of specific ICP etching simulation tool software, etching process parameters is not easy to adjust, to not accurate enough to predict outcomes of etching,so now mainly by a large number of experiments on parameter adjustment, validation and improvement.This thesis is in the early stage of this research to study the different shape of the structure of the etching process, on the basis of MEMS by design temperature sensor during processing of comb structure, established the ICP etching process experiment of purpose and the direction in which the process parameters. We first study the parameters of the ICP etching on the etching results, the influence of key research etching/passivation cycle, the gas flow rate and plate offset voltage and power etc factors on the etching results, the influence of the orthogonal experiment method to design the experiment scheme. Optimization respectively by three dimension groove width etching to the required depth, the optimum of the perpendicularity of the sidewall etching parameters. Then, the optimal process parameters applied in the actual preparation, a gyroscope and got ideal etching morphology, gyroscope of various performance indicators meet the practical needs of the sensor.In addition, ICP etching technology on silicon, silica materials and Ⅲ-Ⅴ compound materials such as etching applications more and more, and good results are obtained. The future of MEMS is limitless, the ICP etching technology will increasingly mature, in the machining process of micro-nano electronics play a proper role.