TCAD Simulation Of FeFET-based Basic Logic Circuits And Current Sensing Amplifier

For many years, the field of electronics and integrated circuits has been dominated by the MOSFET. However, the constantly growing field of space exploration has led to a high demand for electronics that perform properly and reliably in radiation environments. Due to the MOSFET’s undependable functionality in these environments, the ferroelectric field-effecttransistor(FeFET) has garnered growing interest for simple structure, non-volatile, low power consumption, high speed, large density, and the advantages of good radiation resistance. And some scientists predict it will take place of MOSFET. Despite this, only the FeFET’s use in memory elements has been extensively studied. In order to lay the groundwork for the numerous potential applications of the FeFET, this transistor’s behavior in the basic analog circuit configurations must first be examined and modeled to facilitate future research. This paper is based on the ferroelectric field effect transistor of MFIS structure as the research object using Sentaurus TCAD device simulation software, research the simulation of the electrical properties of FeFET and the simulation of a current sensitive amplifier composed of basis gate circuit, in order to hope to provide constructive guidance to the FeCMOS circuit in the Fe FET application. The specific content of the work are summarized as follows:Firstly, basing the Structure Editor module of Sentaurus TCAD. By adding the model of ferroelectric polarization in the physical model and setting different parameters of the ferroelectric material in the material module, we simulate the polarization characterister and the drain current characterister of Fe FET by the way of changing one parameter and fixing other parameters. The results show that: the change of the gate voltage, the larger drain source voltage, the thickness of the ferroelectric thin film and the main material parameters of ferroelectric thin films affect the memory window of voltage and current.Then, basing the model of N type FeFET and P type FeFET established before, the FeFET voltage output characteristic and the voltage transfer characteristic and some basic electrical characteristics have been simulated and analysized. The results show that:(1) in VDS=VG-VTH, FeFET can provide the drain current steadily, which has a certain constructive guidance for providing the drain current steadily when the gate and drain is shorted of FeFET;(2) FeFET can be used as a transitor used in the transfer voltage, when VG is fixed, Vdrop=VD-VS even VD=VG, at this VG, the voltage drop Vdrop is VTH of FeFET, because VTH is related to VG, different VG can lead to different VTH, so Vdrop is slightly different.Finally, we propose and simulate a current sensitive amplifier composed of basis gate circuit, whose cmponents are N type FeFET and P type Fe FET. The simulation results show that: in the condition of low voltage sense amplifier can correctly read the ferroelectric memory cell of "0" and "1" information; at the same time, it results the output voltage can not go back voltage value of the static working point accurately because of the ferroelectric polarization of the ferroelectric layer. At the same time, we simulate the ability of amplification that memory cell of "0" and "1" have different current.