Research On Wide Band GaN HEMT Power Amplifier With Isolation

Related design issues about C band broadband RF power amplifier is research in this thesis. Thesis describes the basic theory about RF power amplifier and matching in broadband; design a 4-9 GHz RF power amplifier. In view to the bad VSWR of broadband power amplifier, a C band broadband microstrip isolator use YIG is designed and Cascade the isolator to zhe input(power amplifier). Unlike conventional bull isolator, because of the small volume, microstrip isolator could integrate in the power amplifier.First, research progress and achievement in domestic and overseas about broadband power amplifier and microstrip isolator is summarized in that thesis. By reading the literatures, the situation at present and future of broadband amplifiers, isolator is understanded.Secondly, the knowledge introducion about power amplifier is given such as kinds, status, impedance matching and so on.By reading the literatures. Theories and methods about broadband impedance matching are summarized in that thesis.After comparison, choice a suit scheme.Then, a C band broadband RF power amplifier(schematic and layout) is designed with ADS by using Triqunint Company GaN HEMT products TGF2023-2-02., The amplifier is worked in class AB Under Vds=28 V, Vgs=-3.6 V. Test results is good in the frequency range of 3-9GHz. After amplifier processing, a comparison for simulation and test results is doneMicrostrip isolator is necessary in order to proving the bad Reflection. The knowledge introducion about power amplifier is given such as parameter of ferrite, operating principle of isolator, and so on by reading the literatures.A Broadband C-Band microstrip junction circulator is designed in this thesis, and the design method and process are given. By using double Y-junction technology, we improve the bandwidth of the circulator. The substrate is YIG single crystal ferrite materials. This circulator is simulated with HFSS software. After Optimization, we get performances of the circulator, the results show that insertion loss of circulator is less than 0.5 dB from 3.90-9.15 GHz, isolation is more than 15 d B. After amplifier processing, test result shows a good effect of isolation.