Research On Luminescent Diagnostic Of GaN Epitaxial Layers Grown Under Different Technological Conditions

Semiconductor materials have been widely applied in our production life，play animportant role。This is a kind of material，whose electric conductivity betweenconductor and insulator。it can be found in the television, radio, and a lot of thetemperature measuring device。As his conductivity can be controlled, from theperspective of science，technology and economic development, semiconductormaterials have very great importance, now in the21st century, they are found in ourlife everywhere，such as computers, mobile phones and other electronic equipment,automotive anti-collision radar and other optoelectronic market segments,photoelectric communication, military areas, LED semiconductor lighting industryand so on.。Common semiconductor materials such as silicon, germanium, galliumarsenide.The third main group elements as a very promising optical materials have beenwidely used in light electric equipment research and development。 At present, hasbeen produced from ultraviolet to infrared wavelengths of photodiode, laser diode,panchromatic photoelectric diode display and so on. And gallium nitride, as onewith a larger band gap width of the semiconductor, has attracted the attention ofpeople and focus on the research, the gallium nitride as a kind of excellent opticalmaterials become semiconductor has important application value.. Our materials aregallium nitride epitaxial layer, under different process conditions for the growth ofthe sapphire substrate. we mainly change the dislocation density, research thedislocation density effect on the material glow.This article we mainly aims at gallium nitride thin film，which grows on c sideof sapphire substrate with different dislocation density, and uses two methods：photoluminescence and cathode ray emitting,researches on the influence of thedislocation density on Gallium nitride layer exciton intensity. Gallium nitride layer by metal organic vapor deposition grows in c-side of the sapphire substrate.Our studyis through pulsed light spectrum to illustrate.The expected conclution: The dislocation density can produce an effect on theluminous intensity of the material。 We according to the analysis of experimentalresults, the change of dislocation density can make the material more luminousefficiency, and get better methods to produse excellent semiconductor devices andoptoelectronic devices..