Study On Growth Of InN/InGaN Nanostructure By CVD

The wide application prospect of III nitride and their alloys in optoelectronic and microelectronic devices has caused great concern.InN is the preferred materials for the preparation of high efficiency and low cost solar cells,optical masks and many kinds of sensors,which is a member of III nitride and have the smallest band gap.The band gap range of InGaN three element alloy material can be adjusted according to the proportion between In and Ga,which range is from the 0.7eV of InN to 3.4eV of GaN and can be adjusted continuously.The appearance of this material provides a great possibility for the design of new solar cells.The three-dimensional model of 6 inch large size vertical CVD system is built to get the best growth condition which considers actual preparation in computational fluid dynamics?CFD?simulation method.Firstly,the surface deposition rate of GaN on the substrate increases obviously and the GaN uniformity change obviously when the GaCl proportion is increases with the constant of the intake flow rate.Secondly,if the NH₃ flow rate is increased,the surface deposition rate of GaN will first increase and then decrease.The NH₃ flow rate reaches 54slm,which can not only guarantee the growth rate of GaN,but also guarantee the growth uniformity of GaN.Lastly,a better homogeneity of GaN is grew on the substrate by adjusting the distance between the substrate and the injector.The uniformity of GaN accords with the requirement of the experiment when the distance is between 190mm and 210mm.Chemical vapor deposition?CVD?is used to prepare InN/InGaN from ammonia flow,catalyst selection and other factors.The experimental results show that the factors such as the flow of ammonia and the selection of catalyst have great influence on the growth of InN/InGaN nanomaterials.Greater NH₃ flow can not only increase the growth rate of InN,but also grow InGaN alloys with high In components.And the graphene/Au coated sapphire substrate effectively grown nanowires of good quality materials and high In component InGaN material.