High Efficency Harmonic Controlled Radio Frequency Power Amplifier Design

Nowadays society’s huge demands for high-speed data transmission and multi-functional smart mobile communication devices promote the development of wireless communication technology rapidly, but also brought great challenge to the design and manufacture of wireless communication devices and components. Meanwhile heat output which is caused by high power has become a big problem that can not be ignored anymore. Microwave power amplifiers is a key module of wireless communication system, its performance directly determines the efficiency of the whole system.Class-J power amplifier uses a modulating harmonic component to achieve the purpose of increasing the efficiency. Compared with class-F, class-J amplifier has a better linearity, a more simple circuit configuration and cheaper. And the circuit can be design and simulate together with the model, which could improve the accuracy of design.GaN-based materials AlGaN/GaN high electron mobility transistor (HEMT).have becoming the research highlight of high-power microwave devices and circuits, due to its high electron mobility, high band gap (3.4 eV), and high breakdown voltage (breakdown field strength of up to 3.3MV/cm), high thermal conductivity (for four times the GaAs material) and so many advantages. Work of this thesis is based on the self-developed GaN HEMT which is fabricated on SiC substrate and has gate width of 20mm, creating its EEHEMT model, using ADS to design the matching-network circuit,and made a 5.5GHz, with more than 60W output power above 500MHz bandwidth, and with more than 40% PAE high power internal-matched RF amplifiers.This thesis analyzes the theoretical basis of class-J RF power amplifier in the last chapter, use PA-Wave to analyze the ideal transistor amplifier output voltage and current waveforms. Finally, a class-J RF power amplifier is designed which works at 1.85GHz, up to 63% efficiency, and with 13dB power gain. When the magnitude of the changes in the drain voltage reaches 30V, the amplifier can still maintain a relatively stable value of efficiency...