InGaAs/Al₂O₃ Finfet Electrical Measurement And Parameter Extraction

With the MOSFET device scaling down, transistor size in planar silicon integrated circuit is approaching the physical limits. According to Moore law, if we want to shrink the size of MOSFET, there must be material and structure innovation in devices. FinFET has excellent ability in gate control, and Ⅲ-Ⅴ material has great electon mobility, combination of two merits has a great prospect in the future. In this thesis, we will take In0.53 Ga0.47 As/Al2O3 n-FinFET as the research object.In the first chapter, FinFET and Ⅲ-Ⅴ materials research background and significance are introduced, respectively. The second chapter, we introduce the InGaAs FinFET device structure and process flow, and describe some basic electrical measuement methods for MOSFET in principle and equipent. In the third chapter, we measure InGaAs FinFET Ⅰ-Ⅴ characteristics in variable temperature. Measure the source drain series resistance and get FinFET calibrated intrinsic Ⅰ-Ⅴ features. In the fourth chapter, we describe the multiple subbands quasi ballistic transport theroy; extract InGaAs FinFET electrical characteristics including electron mobility.The main conclusions of the thesis are:(1) InGaAs/Al2O3 FinFET source drain series resistance is calculated from the experimental results, about 300Ω. Considering the S/D series resistance, this thesis puts forward a calibration method to calculate the MOS transistor intrinsic Ⅰ-Ⅴ characteristics. (2) Develop multiple subbands ID quantum capacitance model. Through comparing with traditional capacitance, validate that quantum effects will reduce the gate capacitance in nanoscale. Combination with multiple subbands and ballistic transport models, a compact set of equations are developed to describe FinFET in linear region under low Vds. (3) Calculate that electron mobility is 370 cm2/V*s and the transmission coefficient T is about 0.05 to 0.06. (4) About abnormal temperature characteristic for InGaAs FinFET mobility, we put forward that because of high interface traps and oxide traps, Coulomb scattering is introduced, which lead to the mobility increasing with temperature rise.