Study On The Characterization And Suppression Of TSV-MOSFET Noise Coupling Effect

With the rapid development of integrated circuits, Three-Dimensional Integration has received extensive research and attention owing to its good application prospect. Three-Dimensional Integration based on the through silicon via(TSV) technology has great advantages in performance, functionality, size and cost, which is the main implementation technique currently. But due to the parasitic capacitance between the TSV and substrate, coupling noise is generated in surrounding silicon substrate when signal flowing through TSV, which have a significant influence on the saturation current and threshold voltage of MOSFET devices in the active region. Furthermore,the variation of MOSFET has affected performance and functionality of circuits, and reduced reliability of the whole system on a chip.Reliability problem caused by TSV-MOSFET noise coupling effect seriously affects the development and practical application of Three-Dimensional Integration.The objective of this dissertation is to study TSV-substrate noise coupling principle, impact of TSV structure parameters and substrate parameters on noise coupling, changing of MOSFET characteristics caused by coupling noise and noise suppression methods. The main work of this paper can be summarized as follows:1. On the basis of depth study for TSV integration technology and process technology, TSV parasitic parameters are analyzed and optimization of substrate noise based on the TSV-substrate RC unit lumped model is given,studying on the impact of TSV on substrate noise from TSV model.2. The generation and propagation principle of TSV-substrate coupling noise is discussed in detail. The impact of TSV some important design parameters on TSV-substrate noise coupling effects are analyzed with TCAD. Furthermore, impact of the TSV non-ideal effects,signal frequency and transition time on TSV-substrate noise coupling are also presented.At last, according to the above conclusions, design guidance with practical value is given.3. The impact of different substrate structure and doping concentrations on the coupled noise is analyzed. Then impact of different feature size MOSFET and substrate biasMOSFET on substrate noise has been studied. At last, the concept of KOZ of substrate noise is proposed, and the relationship of KOZ and TSV structure parameters is mastered. Based on the noise of KOZ, optimization strategies are proposed for distributing MOSFET around the TSV.4. The impact of TSV-substrate coupling noise on MOSFET by has been studied. In the cases of common-source amplifier, the TSV-substrate noise effect making an impact on circuit gain, bandwidth, noise and power consumption is verified. Then several methods to suppress coupling noise are discussed, which are verified with TCAD, and suppression principle of these methods is analyzed.