Study On The Micro Manufacture Technology For The SAW Devices

In recent years, Electronic components are developing toward high integration, low-power-loss and high-speed with the development of MEMS and semiconductor technology. The materials of SAW devices play a decisive role in properties of the devices. Quartz and LiNbO3 bonded with Si respectively with bonding technology, and the bonded wafer were polished to reduce the thickness of the device. And simple devices was designed and the performance of the device was simulated with COMSOL and MATLAB. The lithography technology of the device is researched in the following. The mainly results were as follows:① The 8mm X 8mm bonding chips were obtained by selecting a certain wavelengths of UV curing adhesive, and exposing with 300-436nm wavelength of exposure machine. Bonded LiNbO3 and quartz with silicon wafer respectively. The maximum shear force was 116.2 N and 117.9 N measured with shear force test machine and the fracture energy of LiNbO3 bonding chips was 5.831 J/m2 measured by crack-opening method. SEM shows that the thickness of the middle layer was about 3 microns.② During the design of SAW device, designed the parameters of IDT according with the δ function model and the experiment and got the retarder with width 2.495μm and resonator with width 2μm. The layout design was drawn with L-edit according with the result of design then got the mask needed in the experiment.③ The model of designed device was built using finite element software COMSOL, and to analyzed the wave propagation characteristics of the device. The insertion loss and resonance admittance of the SAW resonator were simulated according to P matrix and COM model based on the material of LiNbO3 with MATLAB.④ On the bonded wafer the best lithography profile with the designed mask was got through coating, prebaked, exposed, developed four parts. The best lithography profile-lithographic line width 2.495μm observed with a microscope was got under the conditions of prebaked 100 ℃(10min), the exposure time 7.5s, the developing time 40s. The best lithography profile- lithographic line width 2μm was got under the conditions of prebaked 100 ℃ (10min), the exposure time 8s, the developing time 40s.