Investigation Of Ⅲ-Ⅴ/SOI Hybrid Integrated Lasers And Key Fabrication Process

To realize highly compact, ultra fast and low cost optoelectronic devices, lots ofprogresses have been made in silicon photonics due to the capability of replacing electricalinterconnection with chipscale optical interconnection. Being the first generationsemiconductor, silicon is not only electrical material but also optical material. Ultra largescale integrated electronic circuits are based on standard complementary metal oxidesemiconductor (CMOS) process, which provide high volume, low cost solution for siliconphotonics. Multiple passive devices such as array waveguide grating, optical modulator andoptical switchescan be fabricated on a single SOI chip. However, owing to the siliconindirect bandgap, silicon light sources still remain as big challenge.Several methodsincluding silicon nanocrystals, erbium-doped silicon and silicon germanium have appliedto strengthen the luminescence efficiency of silicon-based light source. However, hybridintegrated Si/III-V lasers have been only demonstrated as promising light source forchipscale optical interconnection. In the dissertation, we proposed two kinds of hybridintegrated III-V/Si lasers. And we developed an ultra thin BCB bonding process using thenanoimprinter.High light of our works can be listed as follows:(1)We designed a selectable hybrid integrated III-V/SOI single mode laser based onvernier effect. Owing to the vernier effect between III-V F-P cavity and III-V/SOI hybridmicroring, we achieved single wavelength laser which can be thermally tuned.(2) Wedesigned a four-wavelength hybrid integrated III-V/SOI laser based on sampled Bragggrating for CWDM in SOI photonic circuit.(3)We developed a kind of ultra thin BCBbonding process using the nanoimprinter.20nm BCB bonding layer is achieved forchipscale optoelectronic devices with mechanical strength of2MPa.