The Effect Of Magnetron Sputtering And Annealing Temperature On H-BN Thin Films

h-BN is a layered structure which is similar to graphite. Due to the uniquestructure, h-BN has excellent physical and chemical properties and higher practicalpotentiality, such as wide forbidden bandwidth, high thermal conductivity, highmelting point, low dielectric constant, good thermal shock resistance, good electricalinsulation, whose properties are better than graphite. This paper focuses on the effectof magnetron sputtering and annealing temperature on h-BN thin films.BN thin films were deposited on the surface of the n-Si (100) substrate by radiofrequency (RF) magnetron sputtering method. The thin films were characterized byAFM, SEM, FTIR, Raman and XPS. The effects of nitrogen flux, negative bias,hydrogen flux and annealing on the morphologies and microstructure of BN thin filmswere investigated. The results are below:(i) The suitable amount of nitrogen flux reduced the surface roughness andincreased the crystallinity of BN thin films. High negative bias changed theLayer-by-layer mode and the grain orientation of BN thin films and induced thetransformation from h-BN to c-BN, which was not in faver of the production ofhigh-quality h-BN thin films with the Layer-by-layer mode. The suitable amount ofhydrogen flux rate reduced the defects and suppressed the transformation from h-BNto c-BN and improved the stability of h-BN thin film, which was beneficial to theproduction of high-quality h-BN thin films with the Layer-by-layer mode.(ii) The morphologies and microstructures of BN thin fiims were affectedsignificantly by nitrogen flux, negative bias and hydrogen flux. The optimalparameters for the preparation of high-quality h-BN thin films with theLayer-by-layer mode are nitrogen flux of12sccm, negative bias of0V and hydrogenflux of12sccm.(iii) N and H were doped on h-BN thin films by annealing, but annealinginduced the transformation from h-BN to c-BN with E-BN and w-BN as interphases,and the most effective temperature for h-BN converting to c-BN is900℃. which wasnot in faver of the production of high-quality h-BN thin films with theLayer-by-layer mode.