Preparations And Properties Of SiC Multilayer Thin Films

In the paper, SiC thin films were prepared on Si（100） and stainless steelsubstracts at room temperature by RF magnetron sputtering, then were crystaillizedby following annealing process at high temperature. SiC thin films werecharacterized by XRD, FTIR, AFM, SEM, PL, XPS, microhardness tester andmultifunctional material surface performance tester. The effects of annealingatmosphere and annealing temperature on the structures and properties of SiC filmswere given. In order to improve binding force berween SiC films and differentsubstracts, AlN films were prepared on Si substracts as buffer layer, and Ti/TiN,Al₂O₃, Ni-P films were prepared on stainless steel substractes as a buffer layer too.The main contents are as follows:The first chapter outlines the SiC crystal structure, physical and chemicalproperties, application and prospection, the common preparation methods of films.In addition, the research status, main content and innovation point are introduced.The second chapter introduces the principle of RF magnetron sputtering andelectron beam evaporation, and discribles the preparation of thin films, then the testmethods of thin films are simply introduced.The third chapter discusses the annealing parameters of SiC thin filmsprepared on Si substracts. The XRD, PL, SEM and XPS are used to characteriz thestructures and properties of the films, and the relationships of annealingatmosphere, annealing temperature with the structures and properties of SiC filmsare analyzed.The forth chapter studies the mismatch problem between SiC films with Sisubstracts, AlN buffer layer is prepared on the Si substracts. SiC monolayer andAlN/SiC bilayer films are analysed by PL, AFM and multifunctional materialsurface performance tester.The fifth chapter analysis the peeling of SiC films prepared on stainless steelsubstractes likely to fall off, and Ti/TiN, Al₂O₃, Ni-P are used to improve thebinding force between SiC films and stainless steel substractes. The basicprinciples and preparation of buffer layers are simply introduced.The sixth chapter mainly compares the structures and properties of SiCmonolayer films with Ti/TiN/SiC, Al₂O₃/SiC, Ni-P/SiC multilayer films preparedon stainless steel substrates. The structures, morphologies and properties of monolayer and multilayer films are characterized by XRD, AFM, microhardness,then the structures and properties between monolayer and multilayer films arecompared to find advantages of multilayer films.Chapter seven gets conclusions and outlooks.